Manufacturer Part Number
FGA20N120FTDTU
Manufacturer
onsemi
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) designed for power electronics applications
Product Features and Performance
Trench field stop IGBT technology
1200V collector-emitter breakdown voltage
40A maximum collector current
298W maximum power
Low Vce(on) of 2V at 15V gate voltage and 20A collector current
Fast reverse recovery time of 447ns
137nC gate charge
Product Advantages
High efficiency and low power loss
Reliable and robust performance
Suitable for high-power applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 40A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Reverse Recovery Time (trr): 447ns
Gate Charge: 137nC
Current Collector Pulsed (Icm): 60A
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
TO-3P package
Suitable for through-hole mounting
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial and home appliances
Product Lifecycle
This product is an active and available component from onsemi.
Several Key Reasons to Choose This Product
High-performance IGBT with low power loss and fast switching capabilities
Reliable and robust design, suitable for high-power applications
Efficient thermal management and wide operating temperature range
Compatibility with common power electronics applications and mounting options
FGA180N33ATDTAMI Semiconductor/onsemi