Manufacturer Part Number
FDC655BN
Manufacturer
Fairchild (onsemi)
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
High efficiency and low on-resistance
Fast switching and low gate charge
Robust design with high drain-source voltage rating
Product Advantages
Excellent thermal performance
Reliable and long-lasting operation
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V
Current Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Quality and Safety Features
Robust design for reliable performance
Meets safety and environmental standards
Compatibility
Suitable for a wide range of electronic applications
Application Areas
Power supplies
Motor drives
Switching circuits
Amplifiers
General purpose switching
Product Lifecycle
Currently available
No immediate plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved energy savings
Fast switching and low gate charge for improved system performance
Robust design and reliable operation for long-lasting performance
Suitable for a wide range of electronic applications
