Manufacturer Part Number
FDC655BN
Manufacturer
onsemi
Introduction
High-performance N-channel PowerTrench® MOSFET with a very low on-resistance.
Product Features and Performance
Extremely low on-resistance
High power handling capability
Fast switching speed
Low gate charge
Optimized for high-frequency, high-efficiency switching applications
Product Advantages
Excellent power efficiency
Reduced power losses
Compact design
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.3 A, 10 V
Current Continuous Drain (Id) @ 25°C: 6.3 A
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V
Power Dissipation (Max): 1.6 W
Vgs(th) (Max) @ Id: 3 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 4.5 V, 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Surface mount package (SOT-23-6 Thin, TSOT-23-6)
Compatible with various electronic systems and applications
Application Areas
Switching power supplies
Motor drives
Battery chargers
DC-DC converters
Amplifiers
Telecom and industrial equipment
Product Lifecycle
Currently in production
Replacement or upgrade options available from the manufacturer
Several Key Reasons to Choose This Product
Exceptional power efficiency and low power losses
Compact and space-saving design
Reliable and robust performance
Suitable for a wide range of high-frequency, high-efficiency switching applications
Compatibility with various electronic systems and equipment