Manufacturer Part Number
FDC655AN
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor
Part of the PowerTrench series
Product Features and Performance
Drain to Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs) (Max): ±20 V
On-Resistance (Rds(on)): 27 mΩ @ 6.3 A, 10 V
Continuous Drain Current (Id): 6.3 A @ 25°C
Input Capacitance (Ciss): 830 pF @ 15 V
Power Dissipation (Max): 1.6 W
Product Advantages
Low on-resistance for high efficiency
Fast switching for high-frequency applications
Robust design for reliable operation
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 3 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 4.5 V, 10 V
Gate Charge (Qg): 13 nC @ 5 V
Quality and Safety Features
Operating Temperature: -55°C to 150°C
ESD protection
Compatibility
Suitable for surface mount applications
Application Areas
Switching power supplies
Motor drives
Robotics
Industrial automation
Product Lifecycle
Currently available
No indication of discontinuation
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and robust design
Suitable for a wide range of power electronics applications
Efficient operation with low on-resistance
