Manufacturer Part Number
FDC655AN
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel power MOSFET in a compact SuperSOT-6 package
Product Features and Performance
Designed for high-frequency, high-efficiency switching applications
Low on-resistance for low conduction losses
Fast switching characteristics for high-frequency operation
Rugged design with high avalanche energy rating
Product Advantages
Compact package size
Low on-resistance
Fast switching speed
High avalanche energy rating
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs) (Max): ±20 V
On-Resistance (Rds(on)) (Max): 27 mΩ @ 6.3 A, 10 V
Continuous Drain Current (Id) (Ta): 6.3 A
Input Capacitance (Ciss) (Max): 830 pF @ 15 V
Power Dissipation (Max): 1.6 W (Ta)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Compatible with various high-frequency, high-efficiency switching applications
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
This product is actively supported and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Compact and efficient design for high-frequency, high-efficiency applications
Low on-resistance for low conduction losses
Fast switching characteristics for high-frequency operation
Rugged design with high avalanche energy rating
RoHS3 compliance and AEC-Q101 qualification for reliability and safety
