Manufacturer Part Number
FDC658AP
Manufacturer
onsemi
Introduction
P-Channel PowerTrench MOSFET in a SuperSOT-6 package
Product Features and Performance
30V Drain-Source Voltage (Vdss)
50mΩ Max On-Resistance (Rds(on)) at 4A, 10V
4A Continuous Drain Current (Id) at 25°C
-55°C to 150°C Operating Temperature Range
470pF Max Input Capacitance (Ciss) at 15V
6W Max Power Dissipation at 25°C
1nC Max Gate Charge (Qg) at 5V
Product Advantages
High efficiency and low power loss
Compact SuperSOT-6 package
Suitable for power switching applications
Key Technical Parameters
Vdss: 30V
Vgs(th): 3V @ 250μA
Rds(on): 50mΩ @ 4A, 10V
Id: 4A @ 25°C
Ciss: 470pF @ 15V
Power Dissipation: 1.6W @ 25°C
Gate Charge (Qg): 8.1nC @ 5V
Quality and Safety Features
RoHS3 compliant
ESD protection
Compatibility
Compatible with various power supply and power management applications
Application Areas
Switch-mode power supplies
Motor drives
Power amplifiers
Battery chargers
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available from onsemi
Key Reasons to Choose This Product
High efficiency and low power loss for improved energy savings
Compact SuperSOT-6 package for space-constrained designs
Wide operating temperature range for diverse applications
Suitable for various power management and switching applications
