Manufacturer Part Number
FDC658AP
Manufacturer
Fairchild (onsemi)
Introduction
High-performance P-channel MOSFET transistor for power management applications
Product Features and Performance
Low on-resistance for high efficiency
Fast switching speed
Rugged and reliable design
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power conversion efficiency
Reduced power dissipation
Improved system reliability
Versatile for various power management applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 50mΩ @ 4A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 470pF @ 15V
Power Dissipation (Pd): 1.6W @ 25°C
Quality and Safety Features
Robust design for reliable operation
Compliance with relevant safety standards
Compatibility
Suitable for a wide range of power management applications
Application Areas
Power supplies
DC-DC converters
Motor drives
Automotive electronics
Industrial control systems
Product Lifecycle
Currently in production
Mature product with established reliability and availability
Replacement or upgrade options available if required
Key Reasons to Choose This Product
Excellent power efficiency and low power dissipation
Fast switching speed for high-frequency applications
Wide operating temperature range for versatile use
Reliable and robust design for long-term performance
Compatibility with various power management systems
