FDC6561AN - onsemi

Manufacturer Part Number

FDC6561AN

Manufacturer

onsemi

Introduction

The FDC6561AN is a dual N-channel MOSFET transistor from onsemi's PowerTrench series, designed for a wide range of power management and switching applications.

Product Features and Performance

30V Drain-to-Source Voltage (Vdss)

95mΩ maximum on-resistance (Rds(on)) at 2.5A, 10V

5A maximum continuous drain current (Id) at 25°C

220pF maximum input capacitance (Ciss) at 15V

Logic level gate with 3V maximum gate threshold voltage (Vgs(th))

2nC maximum gate charge (Qg) at 5V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact SuperSOT-6 package for space-saving design

Optimized for high-efficiency power conversion and switching applications

Excellent thermal performance and reliability

Compliant with RoHS3 directive

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

On-Resistance (Rds(on)): 95mΩ @ 2.5A, 10V

Continuous Drain Current (Id): 2.5A @ 25°C

Input Capacitance (Ciss): 220pF @ 15V

Gate Threshold Voltage (Vgs(th)): 3V @ 250μA

Gate Charge (Qg): 3.2nC @ 5V

Quality and Safety Features

ROHS3 compliant

Robust design for reliable operation

Compatibility

Standard surface mount SOT-23-6 and TSOT-23-6 package

Application Areas

Power management and switching circuits

Battery chargers and power supplies

Lighting and motor control applications

Portable electronics and IoT devices

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgraded versions may be available in the future.

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Compact and space-saving SuperSOT-6 package

Wide operating temperature range for diverse applications

Robust and reliable design for long-term use

RoHS3 compliance for environmentally-friendly applications