FCP190N65F - Fairchild Semiconductor

Manufacturer Part Number

FCP190N65F

Manufacturer

Fairchild (onsemi)

Introduction

High-performance N-Channel MOSFET with low on-resistance and fast switching speed for high-frequency power conversion applications.

Product Features and Performance

High voltage rating of 650V

Low on-resistance of 190mΩ @ 10A, 10V

High continuous drain current of 20.6A at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching speed with low gate charge of 78nC @ 10V

Product Advantages

Excellent for high-frequency power conversion

Highly efficient with low conduction and switching losses

Reliable performance in harsh environments

Easy to drive with 10V gate-source voltage

Key Technical Parameters

Drain-Source Voltage (Vdss): 650V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 190mΩ @ 10A, 10V

Continuous Drain Current (Id): 20.6A at 25°C

Input Capacitance (Ciss): 3225pF @ 25V

Power Dissipation (Pd): 208W at Tc

Quality and Safety Features

RoHS compliant

Meets industrial safety and reliability standards

Compatibility

Suitable for a wide range of high-frequency power conversion applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Solar power systems

Industrial and consumer electronics

Product Lifecycle

This product is currently in active production and available for purchase.

Replacement or upgrade options may be available in the future as technology advances.

Key Reasons to Choose This Product

Excellent performance and efficiency for high-frequency power conversion

Reliable operation in harsh environments

Easy to drive with a 10V gate-source voltage

Compact and space-saving TO-220-3 package

Long-term availability and support from a leading semiconductor manufacturer