FCP190N65F - onsemi

Manufacturer Part Number

FCP190N65F

Manufacturer

onsemi

Introduction

High-performance N-channel power MOSFET

Designed for high-efficiency power conversion applications

Product Features and Performance

High blocking voltage up to 650V

Low on-resistance of 190mΩ at 10A, 10V

Fast switching with low gate charge of 78nC at 10V

Wide operating temperature range of -55°C to 150°C

High current capability of 20.6A at 25°C case temperature

Product Advantages

Excellent power efficiency due to low on-resistance

Fast switching for high-frequency power conversion

Robust design for reliable operation in harsh environments

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 650V

Maximum Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 190mΩ @ 10A, 10V

Continuous Drain Current (Id): 20.6A @ 25°C case temperature

Input Capacitance (Ciss): 3225pF @ 25V

Power Dissipation (Tc): 208W

Quality and Safety Features

RoHS3 compliant

Qualified to AEC-Q101 automotive standard

Compatibility

Through-hole mounting in TO-220-3 package

Application Areas

High-efficiency power supplies

Motor drives

Inverters

Switch-mode power supplies

Product Lifecycle

Currently in active production

No plans for discontinuation, replacements or upgrades

Several Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Fast switching for high-frequency power conversion

Robust design for reliable operation in harsh environments

High current capability and wide temperature range

Qualified to automotive industry standards for quality and safety