Manufacturer Part Number
FCP190N60
Manufacturer
onsemi
Introduction
This is a power MOSFET transistor from onsemi's SuperFET II series, offering high voltage, high current, and low on-resistance performance.
Product Features and Performance
600V drain-source voltage rating
2A continuous drain current at 25°C
199mΩ maximum on-resistance at 10A, 10V
-55°C to 150°C operating temperature range
2950pF maximum input capacitance
208W maximum power dissipation
Product Advantages
Excellent power handling capability
High voltage and current ratings
Extremely low on-resistance for efficient power conversion
Wide operating temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 199mΩ @ 10A, 10V
Continuous Drain Current (Id): 20.2A @ 25°C
Input Capacitance (Ciss): 2950pF @ 25V
Power Dissipation (Ptot): 208W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable through-hole mounting
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and consumer power electronics
Product Lifecycle
This is an active, in-production part from onsemi
No plans for discontinuation, with long-term availability and support
Key Reasons to Choose This Product
Excellent power handling and efficiency due to extremely low on-resistance
Robust 600V voltage rating and 20A current capability
Wide operating temperature range for diverse applications
RoHS3 compliance for use in modern electronic systems
Proven reliability in the onsemi SuperFET II series