FCP190N60E - onsemi

Manufacturer Part Number

FCP190N60E

Manufacturer

onsemi

Introduction

The FCP190N60E is a high-performance N-channel MOSFET transistor from onsemi's SuperFET II series, designed for a variety of power conversion and control applications.

Product Features and Performance

Drain to Source Voltage (Vdss) of 600V

Maximum Vgs of ±20V

On-state Resistance (Rds(on)) of 190mΩ @ 10A, 10V

Continuous Drain Current (Id) of 20.6A at 25°C

Input Capacitance (Ciss) of 3175pF @ 25V

Power Dissipation (Pd) of 208W at Tc

Product Advantages

Excellent switching and conduction performance

High voltage and current handling capability

Robust design for reliable operation

Suitable for a wide range of power conversion applications

Key Technical Parameters

MOSFET Technology: N-Channel

Threshold Voltage (Vgs(th)): 3.5V @ 250A

Drive Voltage (Max Rds(on), Min Rds(on)): 10V

Gate Charge (Qg): 82nC @ 10V

Quality and Safety Features

Operating Temperature Range: -55°C to 150°C

Compliant with relevant safety and quality standards

Compatibility

Through-hole mounting (TO-220-3 package)

Suitable for use in various power conversion circuits and applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgraded models may become available in the future, but the FCP190N60E remains a viable option for many applications.

Key Reasons to Choose This Product

Excellent performance and reliability for high-voltage, high-current power conversion applications

Robust design and wide operating temperature range

Proven track record and support from the reputable onsemi brand

Compatibility with common power circuit designs and applications