Manufacturer Part Number
FCP20N60
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
600V drain-to-source voltage
20A continuous drain current at 25°C
190mΩ maximum on-resistance at 10A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 3080pF at 25V
208W maximum power dissipation at 25°C
Product Advantages
Excellent switching performance
Robust design for high reliability
Suitable for a wide range of power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs): ±30V
Threshold Voltage (Vgs(th)): 5V at 250A
On-Resistance (Rds(on)): 190mΩ at 10A, 10V
Input Capacitance (Ciss): 3080pF at 25V
Power Dissipation: 208W at 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting (TO-220-3 package)
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Lamp ballasts
Industrial and consumer electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent switching performance and high voltage handling capability
Robust and reliable design for long-term operation
Wide operating temperature range and high power dissipation capability
Suitable for a broad range of power conversion applications
Manufactured to high quality standards and RoHS3 compliant