Manufacturer Part Number
FCP190N60-GF102
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET
Optimized for high-frequency, high-voltage switching applications
Product Features and Performance
600V Drain to Source Voltage (Vdss)
2A Continuous Drain Current (Id) @ 25°C
199mΩ Maximum Drain-Source On-State Resistance (Rds(on)) @ 10A, 10V
2950pF Maximum Input Capacitance (Ciss) @ 25V
208W Power Dissipation (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
Excellent high-frequency switching performance
Low on-state resistance for high efficiency
High voltage handling capability
Wide operating temperature range
Key Technical Parameters
N-Channel MOSFET
600V Drain to Source Voltage
2A Continuous Drain Current
199mΩ Maximum Drain-Source On-State Resistance
2950pF Maximum Input Capacitance
Quality and Safety Features
RoHS3 Compliant
TO-220-3 Package
Compatibility
Through-hole mounting
Compatible with a variety of high-voltage, high-frequency switching applications
Application Areas
Switch-mode power supplies
Motor drives
Induction heating
Uninterruptible power supplies (UPS)
Solar inverters
Industrial automation
Product Lifecycle
Currently available
No information on planned discontinuation
Key Reasons to Choose This Product
Excellent high-frequency switching performance
Low on-state resistance for high efficiency
High voltage handling capability
Wide operating temperature range
RoHS3 compliance
Proven reliability and performance