FCP190N65S3 - onsemi

Manufacturer Part Number

FCP190N65S3

Manufacturer

onsemi

Introduction

High-performance N-channel power MOSFET in a TO-220-3 package

Product Features and Performance

Drain-source voltage up to 650V

Very low on-resistance (RDS(on) = 190mΩ typical)

High continuous drain current (ID = 17A at 25°C)

Wide operating temperature range (-55°C to 150°C)

Low gate charge (Qg = 33nC typical)

High input capacitance (Ciss = 1350pF typical)

Product Advantages

Excellent efficiency and low power loss

Reliable and robust performance

Suitable for high-voltage and high-power applications

Key Technical Parameters

Drain-Source Voltage (VDS): 650V

Gate-Source Voltage (VGS): ±30V

On-Resistance (RDS(on)): 190mΩ @ 8.5A, 10V

Continuous Drain Current (ID): 17A at 25°C

Input Capacitance (Ciss): 1350pF @ 400V

Power Dissipation (Pd): 144W at 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for high-voltage and high-power applications

Compatibility

Can be used in a wide range of power electronics and power conversion applications

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial and automotive electronics

Product Lifecycle

The FCP190N65S3 is an active and available product from onsemi.

Replacements or upgrades may be available in the future, but this model is currently in production.

Key Reasons to Choose This Product

Excellent performance and efficiency

Reliable and robust design

Suitable for high-voltage and high-power applications

Wide operating temperature range

RoHS3 compliant