Manufacturer Part Number
FCP22N60N
Manufacturer
onsemi
Introduction
High-voltage, high-current N-channel MOSFET transistor
Product Features and Performance
600V drain-source voltage rating
Very low on-resistance (165mΩ max. @ 11A, 10V)
High current capability (22A continuous @ 25°C)
Low gate charge (45nC max. @ 10V)
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (1950pF max. @ 100V)
Product Advantages
Efficient power conversion and control
Suitable for high-voltage, high-current applications
Reliable and robust performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±45V
On-Resistance (Rds(on)): 165mΩ max. @ 11A, 10V
Continuous Drain Current (Id): 22A @ 25°C
Input Capacitance (Ciss): 1950pF max. @ 100V
Power Dissipation (Pd): 205W max. @ 25°C
Quality and Safety Features
RoHS3 compliant
Qualified to military and automotive standards
Compatibility
Designed for high-voltage, high-current power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no announced discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
High reliability and robustness
Versatile application capabilities
Proven technology and quality