Manufacturer Part Number
FCP260N65S3
Manufacturer
onsemi
Introduction
N-channel enhancement mode MOSFET transistor designed for high efficiency, high frequency switching applications.
Product Features and Performance
High voltage rating up to 650V
Low on-resistance of 260mΩ at 6A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1010pF at 400V
High power dissipation of 90W at Tc
Product Advantages
Excellent switching performance for high efficiency power conversion
Robust design for reliable operation in harsh environments
Compact TO-220-3 package for easy integration
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±30V
Drain Current (Id): 12A at 25°C
On-Resistance (Rds(on)): 260mΩ at 6A, 10V
Input Capacitance (Ciss): 1010pF at 400V
Power Dissipation (Pd): 90W at Tc
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Suitable for a wide range of high-voltage, high-frequency power conversion applications, such as:
Switch-mode power supplies
Motor drives
Inverters
Converters
Application Areas
Industrial
Automotive
Consumer electronics
Product Lifecycle
The FCP260N65S3 is an active and widely available product in onsemi's portfolio. There are no plans for discontinuation, and various upgrades and replacement options are available for future product needs.
Key Reasons to Choose This Product
Excellent electrical performance for high efficiency power conversion
Robust design for reliable operation in harsh environments
Wide operating temperature range for versatile applications
Compact package for easy integration
Availability of replacement and upgrade options