FCP36N60N - onsemi

Manufacturer Part Number

FCP36N60N

Manufacturer

onsemi

Introduction

The FCP36N60N is a high-performance N-channel power MOSFET transistor designed for use in a variety of power conversion and control applications.

Product Features and Performance

High voltage capability up to 600V drain-to-source voltage

Low on-resistance down to 90mΩ

High current handling up to 36A continuous drain current

Fast switching speed with low gate charge

Wide operating temperature range from -55°C to 150°C

Robust and reliable design

Product Advantages

Excellent power efficiency due to low on-resistance

High power density and compact design

Reliable performance across wide temperature range

Suitable for high-voltage, high-current applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 90mΩ @ 18A, 10V

Continuous Drain Current (Id): 36A @ 25°C

Input Capacitance (Ciss): 4785pF @ 100V

Power Dissipation (Tc): 312W

Quality and Safety Features

Designed and manufactured to high quality standards

Robust and reliable construction for long-term performance

Overcurrent and overtemperature protection

Compatibility

Compatible with a wide range of power electronic circuits and systems

Application Areas

Power supplies

Motor drives

Inverters

Switching power converters

Industrial automation and control

Product Lifecycle

This product is currently in active production and availability

Replacement or upgrade options may be available from onsemi

Key Reasons to Choose This Product

Excellent power efficiency and low losses

High voltage and current handling capabilities

Fast switching performance

Wide operating temperature range

Robust and reliable design for demanding applications

Compatibility with a variety of power electronic systems