Manufacturer Part Number
FCP400N80Z
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET with industry-leading SuperFET II technology, designed for a wide range of power conversion and control applications.
Product Features and Performance
High Voltage Rating: 800V Drain-Source Voltage
Low On-Resistance: 400mΩ @ 5.5A, 10V
High Current Capability: 14A Continuous Drain Current @ 25°C
Wide Operating Temperature Range: -55°C to 150°C
Low Input Capacitance: 2350pF @ 1000V
High Power Dissipation: 195W @ Tc
Product Advantages
Efficient power conversion with low conduction losses
Reliable operation in harsh environments
Enables compact and high-density power designs
Optimized for a wide range of power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 400mΩ @ 5.5A, 10V
Continuous Drain Current (Id): 14A @ 25°C
Input Capacitance (Ciss): 2350pF @ 1000V
Power Dissipation (Pd): 195W @ Tc
Quality and Safety Features
ROHS3 Compliant
Qualified for industrial and automotive applications
Rigorous quality control and testing procedures
Compatibility
Suitable for a wide range of power conversion and control applications
Compatible with various power supply and motor control designs
Application Areas
Switch-mode power supplies
Motor drives and controls
Inverters and converters
Industrial automation and control systems
Automotive electronics
Product Lifecycle
This product is currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and performance
Robust design for reliable operation in harsh environments
Optimized for compact and high-density power designs
Comprehensive technical parameters and safety features
Compatibility with a wide range of power applications
Backed by onsemi's industry-leading expertise and quality assurance