Manufacturer Part Number
DMN10H220LQ-7
Manufacturer
Diodes Incorporated
Introduction
The DMN10H220LQ-7 is a discrete N-channel MOSFET transistor from Diodes Incorporated.
Product Features and Performance
N-channel MOSFET
100V drain-source voltage
6A continuous drain current
220mΩ on-resistance
Low gate charge of 8.3nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power switching
Compact SOT-23-3 surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±16V
On-Resistance (Rds(on)): 220mΩ
Continuous Drain Current (Id): 1.6A
Input Capacitance (Ciss): 401pF
Power Dissipation: 1.3W
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Compatible with standard SMT assembly processes
Widely used in various electronic applications
Application Areas
Power management circuits
Switching power supplies
Motor controls
Lighting systems
General purpose switching applications
Product Lifecycle
Current production part
No known plans for discontinuation
Replacement parts and upgrades may be available
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Compact surface mount package
Wide operating temperature range
RoHS3 compliance for environmental safety