DMN10H700S-7 - Diodes Incorporated

Manufacturer Part Number

DMN10H700S-7

Manufacturer

Diodes Incorporated

Introduction

High-performance N-channel MOSFET transistor for automotive and industrial applications

Product Features and Performance

Low on-resistance of 700 mΩ

100 V drain-source voltage rating

Capable of handling up to 700 mA continuous drain current

Fast switching with low gate charge of 4.6 nC

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent thermal efficiency and power handling

Robust design for reliable operation in harsh environments

Compact SOT-23-3 surface-mount package

Key Technical Parameters

Drain-Source Voltage (Vdss): 100 V

Gate-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 700 mΩ @ 1.5 A, 10 V

Input Capacitance (Ciss): 235 pF @ 50 V

Power Dissipation (Pd): 400 mW

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Suitable for use in a wide range of automotive and industrial applications

Application Areas

Automotive electronics

Motor control

Power management

Industrial control systems

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacement or upgraded products may become available in the future, but no specific information is provided.

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance and fast switching

Robust design for reliable operation in harsh environments

Compact surface-mount package for efficient board space utilization

AEC-Q101 qualification for automotive applications