Manufacturer Part Number
DMN10H220LK3-13
Manufacturer
Diodes Incorporated
Introduction
High-performance N-channel MOSFET transistor designed for power management and switching applications.
Product Features and Performance
Drain-Source Voltage up to 100V
Low On-Resistance of 220mΩ @ 2A, 10V
Continuous Drain Current of 7.5A @ 25°C
Wide Operating Temperature Range of -55°C to 150°C
Fast Switching Speed and Low Gate Charge
Efficient Power Dissipation of 18.7W
Product Advantages
Excellent power handling and efficiency
Compact and space-saving TO-252 package
Reliable performance across wide temperature range
Optimized for cost-effective power management
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 220mΩ @ 2A, 10V
Continuous Drain Current (Id): 7.5A @ 25°C
Input Capacitance (Ciss): 384pF @ 25V
Gate Charge (Qg): 6.7nC @ 10V
Quality and Safety Features
RoHS3 compliant
Manufactured using reliable MOSFET technology
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting and LED drivers
Telecommunications equipment
Industrial automation and control
Product Lifecycle
Currently in production
Availability of replacement and upgraded models
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Compact and space-saving package
Reliable operation across wide temperature range
Optimized for efficient power management
Trusted Diodes Incorporated brand and quality