DMN10H170SK3-13 - Diodes Incorporated

Manufacturer Part Number

DMN10H170SK3-13

Manufacturer

Diodes Incorporated

Introduction

This is a discrete N-Channel MOSFET transistor with a TO-252-3 package.

Product Features and Performance

100V Drain to Source Voltage (Vdss)

Maximum Vgs of ±20V

Low On-Resistance of 140mOhm @ 5A, 10V

Continuous Drain Current of 12A at 25°C

Input Capacitance of 1167pF @ 25V

Maximum Power Dissipation of 42W at Tc

Operating Temperature Range of -55°C to 150°C

Product Advantages

Low On-Resistance for efficient power conversion

High Voltage and Current Handling Capabilities

Small TO-252-3 Package for Space-Constrained Designs

RoHS3 Compliant

Key Technical Parameters

N-Channel MOSFET

Vgs(th) of 3V @ 250A

Drive Voltage Range of 4.5V to 10V

Gate Charge of 9.7nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with standard TO-252-3 (D-Pak) mounting

Application Areas

Power Supplies

Motor Drives

Inverters

Industrial Controls

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent Performance-to-Size Ratio

Robust Design for Reliable Operation

Wide Operating Temperature Range

Cost-Effective Solution for Power Conversion Applications