Manufacturer Part Number
DMN10H220L-7
Manufacturer
Diodes Incorporated
Introduction
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device
Product Features and Performance
N-Channel
Drain to Source Voltage (Vdss) of 100V
Gate to Source Voltage (Vgs) up to ±16V
Drain Current (Id) of 1.4A at 25°C
On-Resistance (Rds(on)) of 220mOhm at 1.6A and 10V
Input Capacitance (Ciss) of 401pF at 25V
Power Dissipation of 1.3W at 25°C
Operating Temperature range of -55°C to 150°C
Product Advantages
High breakdown voltage
Low on-resistance
Compact SOT-23-3 package
Suitable for high-speed, high-voltage switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate to Source Voltage (Vgs): ±16V
Drain Current (Id): 1.4A at 25°C
On-Resistance (Rds(on)): 220mOhm at 1.6A, 10V
Input Capacitance (Ciss): 401pF at 25V
Power Dissipation: 1.3W at 25°C
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Suitable for lead-free and halogen-free manufacturing processes
Compatibility
Surface mount (SMD) package
Tape and reel packaging
Application Areas
High-speed, high-voltage switching applications
Power supplies
Motor drives
Amplifiers
Switching circuits
Product Lifecycle
Currently available
No information on upcoming discontinuation or replacement
Key Reasons to Choose This Product
High breakdown voltage and low on-resistance for efficient power switching
Compact SOT-23-3 package for space-constrained designs
Wide operating temperature range for diverse applications
RoHS3 compliance for eco-friendly and safe use
Tape and reel packaging for automated assembly