Manufacturer Part Number
DMN10H120SFG-7
Manufacturer
Diodes Incorporated
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and fast switching for power management applications.
Product Features and Performance
100V drain-source voltage rating
110mΩ maximum on-resistance at 3.3A, 10V
8A continuous drain current at 25°C
549pF maximum input capacitance at 50V
1W maximum power dissipation at 25°C
Fast switching and low gate charge for efficient power conversion
Product Advantages
Low on-resistance for high efficiency
Fast switching for power management applications
Small footprint PowerDI3333-8 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 110mΩ @ 3.3A, 10V
Continuous Drain Current (Id): 3.8A @ 25°C
Input Capacitance (Ciss): 549pF @ 50V
Power Dissipation (Pd): 1W @ 25°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for use in power management, switching, and control circuits
Application Areas
Power supplies
Motor drives
Battery chargers
Industrial automation equipment
Product Lifecycle
Current product offering
No indication of discontinuation
Replacements and upgrades available from Diodes Incorporated
Key Reasons to Choose
Excellent efficiency with low on-resistance
Fast switching for high-frequency power conversion
Small, space-saving package
Automotive-qualified for reliability in harsh environments