DMN10H099SK3-13 - Diodes Incorporated

Manufacturer Part Number

DMN10H099SK3-13

Manufacturer

Diodes Incorporated

Introduction

The DMN10H099SK3-13 is a high-performance N-channel power MOSFET from Diodes Incorporated. This device is designed for a wide range of power management and control applications.

Product Features and Performance

100V Drain-to-Source Voltage (Vdss)

80mΩ Maximum On-Resistance (Rds(on)) at 3.3A, 10V

17A Continuous Drain Current (Id) at 25°C

Low Input Capacitance (Ciss) of 1172pF at 50V

34W Maximum Power Dissipation at 25°C

Product Advantages

Excellent power efficiency due to low on-resistance

Robust and reliable performance across wide temperature range

Suitable for high-power switching and control applications

Key Technical Parameters

Vds: 100V

Vgs(max): ±20V

Rds(on) (max): 80mΩ @ 3.3A, 10V

Id (continuous): 17A at 25°C

Ciss (max): 1172pF @ 50V

Pd (max): 34W at 25°C

Quality and Safety Features

RoHS3 compliant

Meets industrial-grade reliability standards

Compatibility

TO-252-3 (DPak) package, suitable for surface mount applications

Application Areas

Power management circuits

Motor control

Switching power supplies

Industrial automation and control

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacement or upgraded models may be available in the future as technology evolves.

Key Reasons to Choose This Product

Excellent power efficiency and low on-resistance for improved system performance

Reliable and robust operation across a wide temperature range

Suitable for high-power switching and control applications

Compact and surface-mountable package for space-constrained designs

RoHS3 compliance for use in environmentally-conscious applications