Manufacturer Part Number
DMN1045UFR4-7
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Low on-resistance (Rds(on)) of 45mΩ @ 3.2A and 4.5V
Low gate charge (Qg) of 4.8nC @ 4.5V
Wide operating temperature range of -55°C to 150°C
Maximum drain current (Id) of 3.2A at 25°C
Product Advantages
Efficient power handling with low on-resistance
Fast switching for power management applications
Reliable performance across wide temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
Gate to Source Voltage (Vgs): ±8V
Input Capacitance (Ciss): 375pF @ 10V
Power Dissipation (Max): 500mW
Quality and Safety Features
RoHS3 compliant
Optimized for reliable surface mount assembly
Compatibility
Compatible with standard MOSFET driver circuits
Application Areas
Power management
Switching power supplies
Motor control
General purpose power switching
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgrade options available from Diodes Inc.
Key Reasons to Choose
Excellent power efficiency with low on-resistance
Fast switching capability for high-frequency applications
Wide operating temperature range for diverse environments
Reliable performance and RoHS compliance for quality assurance