Manufacturer Part Number
DMN1054UCB4-7
Manufacturer
Diodes Incorporated
Introduction
High-performance N-Channel MOSFET transistor suitable for a variety of power management and switching applications.
Product Features and Performance
Low on-resistance for efficient power delivery
Fast switching speeds for high-frequency operation
Able to withstand high drain-to-source voltages
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact, space-saving package
Efficient power conversion and control
Reliable performance in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 8V
Gate-to-Source Voltage (Vgs): ±5V
On-Resistance (Rds(on)): 42mΩ @ 1A, 4.5V
Continuous Drain Current (Id): 2.7A @ 25°C
Input Capacitance (Ciss): 908pF @ 6V
Power Dissipation: 740mW
Quality and Safety Features
RoHS3 compliant
Designed for reliable, long-term operation
Compatibility
Compatible with a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Battery charging circuits
Telecommunication equipment
Industrial automation
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Efficient power delivery with low on-resistance
Reliable performance in harsh environments
Compact, space-saving package
Suitable for a variety of power management and switching applications