Manufacturer Part Number
DMN1032UCB4-7
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
12V Drain to Source Voltage (Vdss)
±8V Gate to Source Voltage (Vgs)
26mΩ On-Resistance (Rds(on)) at 1A, 4.5V
8A Continuous Drain Current (Id) at 25°C
450pF Input Capacitance (Ciss) at 6V
900mW Power Dissipation at 25°C
Operates from -55°C to 150°C
Product Advantages
Low On-Resistance for Efficiency
High Drain Current Capability
Compact 4-UFBGA, WLBGA Package
Surface Mount Compatibility
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
2V Gate Threshold Voltage (Vgs(th)) at 250μA
8V to 4.5V Drive Voltage Range
5nC Gate Charge (Qg) at 4.5V
Quality and Safety Features
RoHS3 Compliant
Designed for Reliable Operation
Compatibility
Compatible with Various Electronic Circuits and Systems
Application Areas
Power Management
Switching Applications
Battery-Powered Devices
Motor Control
Industrial Electronics
Product Lifecycle
Currently Available
No Discontinuation Information
Key Reasons to Choose
Excellent Performance-to-Size Ratio
Efficient Power Handling
Wide Operating Temperature Range
Reliable and RoHS-Compliant Design