Manufacturer Part Number
DMN1019UFDE-7
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Low on-resistance of 10 mΩ @ 9.7 A, 4.5 V
High current capability of 11 A continuous drain current
Low gate charge of 50.6 nC @ 8 V for efficient switching
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal performance for high power density
Efficient switching characteristics
Reliable operation in demanding applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 12 V
Gate-Source Voltage (Vgs Max): ±8 V
Input Capacitance (Ciss): 2425 pF @ 10 V
Power Dissipation (Max): 690 mW
Quality and Safety Features
RoHS3 compliant
U-DFN2020-6 (Type E) package for compact design
Compatibility
Suitable for a wide range of electronic applications
Application Areas
Power management circuits
Motor drives
Switching regulators
Instrumentation and control systems
Product Lifecycle
This product is currently in production and availability is good.
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power handling
Compact and thermally efficient package for space-constrained designs
Reliable performance across a wide temperature range
Efficient switching characteristics for improved system efficiency
RoHS3 compliance for use in eco-friendly applications