Manufacturer Part Number
DMN1019USN-7
Manufacturer
Diodes Incorporated
Introduction
This product is a single N-channel MOSFET transistor.
Product Features and Performance
High drain current capacity up to 9.3A continuous
Low on-resistance of 10mΩ max
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 2426pF max
Power dissipation up to 680mW
Product Advantages
Excellent thermal performance
Compact surface mount package
Suitable for high-current switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
Gate to Source Voltage (Vgs): ±8V
Drain Current (Id): 9.3A
On-Resistance (Rds(on)): 10mΩ max
Input Capacitance (Ciss): 2426pF max
Quality and Safety Features
RoHS3 compliant
SC-59-3 package
Compatibility
TO-236-3, SC-59, SOT-23-3 package types
Application Areas
High-current switching circuits
Power management
Motor control
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available. There are no known plans for discontinuation at this time.
Key Reasons to Choose This Product
High current handling capability
Excellent thermal performance
Low on-resistance for efficient power delivery
Compact surface mount package
Wide operating temperature range
Suitable for various high-current switching applications