Manufacturer Part Number
DMN1016UCB6-7
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
12V Drain to Source Voltage (Vdss)
±8V Gate to Source Voltage (Vgs)
20mOhm Maximum On-Resistance (Rds(on)) at 1.5A, 4.5V
5A Continuous Drain Current (Id) at 25°C
423pF Maximum Input Capacitance (Ciss) at 6V
920mW Maximum Power Dissipation at 25°C
2nC Maximum Gate Charge (Qg) at 4.5V
Product Advantages
High efficiency and low power loss
Fast switching speed
Compact size and surface mount package
Key Technical Parameters
MOSFET technology
N-Channel configuration
1V Maximum Gate Threshold Voltage (Vgs(th)) at 250μA
5V to 4.5V Drive Voltage range
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Compatible with 6-UFBGA, WLBGA package
Tape & Reel (TR) packaging
Application Areas
Power management circuits
Switching power supplies
Motor control
LED drivers
Product Lifecycle
Current production model
Replacement and upgrade options available
Key Reasons to Choose
Excellent performance and efficiency
Compact size and easy integration
Wide operating temperature range
RoHS compliance for environmental safety