Manufacturer Part Number
DMN1008UFDF-7
Manufacturer
Diodes Incorporated
Introduction
High-performance N-channel MOSFET with low RDS(on) and small package
Product Features and Performance
Low on-resistance of 8 mΩ at 5 A, 4.5 V
High current handling capability of 12.2 A at 25°C
Low input capacitance of 995 pF at 6 V
700 mW power dissipation at 25°C
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal performance
High efficiency and low power loss
Small and compact package
Suitable for high-power density designs
Key Technical Parameters
Drain to Source Voltage (Vdss): 12 V
Gate to Source Voltage (Vgs): ±8 V
Threshold Voltage (Vgs(th)): 1 V at 250 μA
On-Resistance (RDS(on)): 8 mΩ at 5 A, 4.5 V
Continuous Drain Current (Id): 12.2 A at 25°C
Input Capacitance (Ciss): 995 pF at 6 V
Gate Charge (Qg): 23.4 nC at 8 V
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Can be used as a replacement or upgrade for similar MOSFET devices
Application Areas
High-power and high-efficiency switch-mode power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and available for purchase
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent thermal and electrical performance
Compact and efficient package design
Robust design for high-reliability applications
Automotive-grade quality and safety features
Compatibility with a wide range of power electronics designs
