Manufacturer Part Number
DMN100-7-F
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Continuous Drain Current (Id) of 1.1A at 25°C
Drain to Source Voltage (Vdss) of 30V
Wide Operating Temperature Range of -55°C to 150°C
Low On-Resistance (Rds(on)) of 240mΩ at 1A, 10V
Input Capacitance (Ciss) of 150pF at 10V
Power Dissipation (Max) of 500mW
Product Advantages
Excellent thermal performance
Compact size for space-constrained applications
Low on-resistance for efficient power delivery
Suitable for a wide range of operating temperatures
Key Technical Parameters
FET Type: N-Channel MOSFET
Vgs(th) (Max): 3V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max): 5.5nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Mounting Type: Surface Mount
Package: TO-236-3, SC-59, SOT-23-3
Application Areas
Power management
Motor control
Switching circuits
General-purpose electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High efficiency and thermal performance
Compact size for space-constrained designs
Wide operating temperature range for versatile applications
Low on-resistance for improved power delivery
Compliance with industry standards (RoHS3)
DMN-8652BOLSILOGIC