DMN1150UFB-7B - Diodes Incorporated

Manufacturer Part Number

DMN1150UFB-7B

Manufacturer

Diodes Incorporated

Introduction

The DMN1150UFB-7B is a discrete N-channel MOSFET transistor designed for use in a variety of power management and switching applications.

Product Features and Performance

Operates in a wide temperature range of -55°C to 150°C

Low on-resistance of 150mΩ @ 1A, 4.5V

Input capacitance of 106pF @ 10V

Continuous drain current of 1.41A at 25°C

Maximum power dissipation of 500mW

Product Advantages

Efficient power management with low on-resistance

Suitable for a wide range of operating temperatures

Compact surface-mount package (3-UFDFN)

Reliable and robust design

Key Technical Parameters

Drain to Source Voltage (Vdss): 12V

Gate to Source Voltage (Vgs): ±6V

Threshold Voltage (Vgs(th)): 1V @ 250μA

Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Gate Charge (Qg): 1.5nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Reliable and durable design

Compatibility

Suitable for a wide range of power management and switching applications

Application Areas

Power supplies

Motor drives

Switching circuits

General-purpose power management

Product Lifecycle

The DMN1150UFB-7B is an active product and not nearing discontinuation.

Replacements and upgrades may be available from Diodes Incorporated.

Key Reasons to Choose This Product

Efficient power management with low on-resistance

Wide operating temperature range for versatile applications

Compact surface-mount package for space-constrained designs

Reliable and robust design for long-term performance

RoHS3 compliance for environmental sustainability