Manufacturer Part Number
DMN1250UFEL-7
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
8 N-Channel, Common Gate, Common Source
12V Drain to Source Voltage (Vdss)
450mOhm Rds On (Max) @ 200mA, 4.5V
2A Continuous Drain Current (Id) @ 25°C
190pF Input Capacitance (Ciss) (Max) @ 6V
1V Vgs(th) (Max) @ 250A
9nC Gate Charge (Qg) (Max) @ 4.5V
Product Advantages
High-performance N-channel MOSFET array
Optimized for power management and switching applications
Compact 12-UFQFN package for space-constrained designs
Key Technical Parameters
MOSFET (Metal Oxide) Technology
Tape & Reel (TR) Package
U-QFN1515-12 Package / Case
-55°C to 150°C (TJ) Operating Temperature
660mW Power Max
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting Type
Application Areas
Power management
Switching applications
Electronic devices
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High-performance N-channel MOSFET array
Compact and space-efficient package
Wide operating temperature range
Suitable for power management and switching applications
RoHS3 compliance for environmental sustainability