Manufacturer Part Number
DMN2004K-7
Manufacturer
Diodes Incorporated
Introduction
N-Channel Enhancement Mode MOSFET Transistor
Product Features and Performance
20V Drain to Source Voltage
630mA Continuous Drain Current at 25°C
550mΩ Maximum On-Resistance at 540mA, 4.5V
150pF Maximum Input Capacitance at 16V
350mW Maximum Power Dissipation at 25°C
-65°C to +150°C Operating Temperature
Product Advantages
Low On-Resistance for Efficient Power Switching
Small Footprint SOT-23-3 Package
Reliable MOSFET Technology
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 550mΩ @ 540mA, 4.5V
Input Capacitance (Ciss): 150pF @ 16V
Power Dissipation (Pd): 350mW
Quality and Safety Features
RoHS3 Compliant
Meets Environmental and Safety Standards
Compatibility
Compatible with a Wide Range of Electronic Circuits and Applications
Application Areas
Power Switching
Amplifiers
Motor Drivers
Industrial Control
Consumer Electronics
Product Lifecycle
Current Production
Availability of Replacement Parts and Upgrades
Key Reasons to Choose This Product
Efficient Power Switching Performance
Small and Compact Package
Reliable MOSFET Technology
Wide Operating Temperature Range
Compliance with Industry Standards