DMN2004TK-7 - Diodes Incorporated

Manufacturer Part Number

DMN2004TK-7

Manufacturer

Diodes Incorporated

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

Drain to Source Voltage (Vdss) of 20V

Vgs (Max) of ±8V

On-Resistance (Rds On) of 550mOhm @ 540mA, 4.5V

Continuous Drain Current (Id) of 540mA @ 25°C

Input Capacitance (Ciss) of 150pF @ 16V

Power Dissipation (Max) of 150mW @ 25°C

Gate Threshold Voltage (Vgs(th)) of 1V @ 250μA

Product Advantages

Low on-resistance for efficient power switching

High current handling capability

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

MOSFET Technology

N-Channel FET Type

Surface Mount Packaging (SOT-523)

Tape & Reel (TR) Packaging

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for various power switching and control applications

Application Areas

Power management circuits

DC-DC converters

Motor control

Audio amplifiers

General purpose switching

Product Lifecycle

Currently available and in production

No known discontinuation plans

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Wide operating temperature range for reliable performance

Small and compact surface mount package for space-constrained designs

Proven MOSFET technology from a reputable manufacturer