MMBTA56LT1 - Infineon Technologies

Manufacturer Part Number

MMBTA56LT1

Manufacturer

Infineon Technologies

Introduction

The MMBTA56LT1 is a PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 (TO-236) package.

Product Features and Performance

Power Rating: 225 mW

Collector-Emitter Breakdown Voltage: 80 V

Collector Current (Max): 500 mA

Collector Cutoff Current (Max): 100 nA

Collector-Emitter Saturation Voltage: 250 mV @ 10 mA, 100 mA

DC Current Gain (hFE): Minimum 100 @ 100 mA, 1 V

Transition Frequency: 50 MHz

Product Advantages

Small, surface mount SOT-23-3 package

High voltage and current handling capability

Low collector-emitter saturation voltage

High DC current gain

Wide operating frequency range

Key Technical Parameters

Package: SOT-23-3 (TO-236)

Transistor Type: PNP Bipolar Junction Transistor

Power Rating: 225 mW

Voltage Rating: 80 V

Current Rating: 500 mA

DC Current Gain: Minimum 100 @ 100 mA, 1 V

Transition Frequency: 50 MHz

Quality and Safety Features

Compliant with RoHS directive

Reliable and durable construction

Designed and manufactured to high quality standards

Compatibility

The MMBTA56LT1 is compatible with a wide range of electronic circuits and systems that require a high-performance PNP BJT in a small surface mount package.

Application Areas

Amplifier circuits

Switch circuits

Logic circuits

Voltage regulation

General-purpose electronics

Product Lifecycle

The MMBTA56LT1 is an active and currently available product from Infineon Technologies. There are no indications of it being discontinued or reaching end-of-life. Replacement or upgrade options may be available from Infineon or other manufacturers.

Key Reasons to Choose This Product

High voltage and current handling capability for a wide range of applications

Compact and space-efficient SOT-23-3 surface mount package

Excellent DC current gain and high-frequency performance

Reliable and durable construction with RoHS compliance

Readily available and actively supported by the manufacturer