Manufacturer Part Number
MMBTA56LT3G
Manufacturer
onsemi
Introduction
Bipolar Junction Transistor (BJT), PNP type
Product Features and Performance
Operates over a wide temperature range of -55°C to 150°C
Power rating of 225 mW
Collector-Emitter Breakdown Voltage (VCEO) of 80 V
Collector Current (IC) up to 500 mA
Collector Cutoff Current (ICBO) up to 100 nA
Low Collector-Emitter Saturation Voltage (VCE(sat)) of 250 mV @ 10 mA, 100 mA
DC Current Gain (hFE) of at least 100 @ 100 mA, 1 V
Transition Frequency (fT) of 50 MHz
Product Advantages
Reliable performance across a wide temperature range
Supports high voltage and current operations
Low saturation voltage for efficient power delivery
High current gain for amplification applications
Suitable for high-frequency switching and amplification
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 80 V
Collector Current (IC): 500 mA
Collector Cutoff Current (ICBO): 100 nA
Collector-Emitter Saturation Voltage (VCE(sat)): 250 mV
DC Current Gain (hFE): 100 @ 100 mA, 1 V
Transition Frequency (fT): 50 MHz
Quality and Safety Features
RoHS3 compliant
Packaged in SOT-23-3 (TO-236) surface mount format
Compatibility
Suitable for a wide range of electronic circuits and applications
Application Areas
Amplifiers
Switches
Drivers
Power supplies
Audio equipment
Industrial electronics
Product Lifecycle
This product is an active and readily available component
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
Reliable performance over a wide temperature range
Supports high voltage and current operations
Low saturation voltage for efficient power delivery
High current gain for amplification applications
Suitable for high-frequency switching and amplification
RoHS3 compliant for environmentally friendly use
Available in a compact surface mount package