MMBTA56LT1 - onsemi

Manufacturer Part Number

MMBTA56LT1

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

Power Max: 225 mW

Voltage Collector Emitter Breakdown (Max): 80 V

Current Collector (Ic) (Max): 500 mA

Current Collector Cutoff (Max): 100nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA

Transistor Type: PNP

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V

Frequency Transition: 50MHz

Product Advantages

Surface Mount Packaging

RoHS non-compliant

Key Technical Parameters

Package / Case: TO-236-3, SC-59, SOT-23-3

Supplier Device Package: SOT-23-3 (TO-236)

Package: Bulk

Quality and Safety Features

RoHS non-compliant

Compatibility

Surface Mount Mounting Type

Application Areas

Discrete Semiconductor Applications

Product Lifecycle

Availability of replacements or upgrades may vary

Several Key Reasons to Choose This Product

High power handling capability (225 mW)

Wide voltage range (80 V)

High current capacity (500 mA)

Good current gain (hFE min 100)

High frequency performance (50 MHz)

Surface mount packaging for easy integration