MMBTA56WT1G - onsemi

Manufacturer Part Number

MMBTA56WT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

SC-70-3 (SOT323) Package

Operating Temperature Range: -55°C to 150°C

Power Rating: 150 mW

Collector-Emitter Breakdown Voltage: 80 V

Collector Current: 500 mA

Collector Cutoff Current: 100 nA

Collector-Emitter Saturation Voltage: 250 mV @ 10 mA, 100 mA

DC Current Gain (hFE): Min. 100 @ 100 mA, 1 V

Transition Frequency: 50 MHz

Product Advantages

Compact Surface Mount Package

Wide Operating Temperature Range

High Voltage and Current Capabilities

Low Collector-Emitter Saturation Voltage

High DC Current Gain

Key Technical Parameters

Transistor Type: PNP

Packaging: Tape & Reel (TR)

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic circuits and applications requiring a PNP bipolar transistor.

Application Areas

Amplifier Circuits

Switching Circuits

Logic Gates

Biasing Circuits

General-Purpose Electronics

Product Lifecycle

Currently in production

Replacement or upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

Reliable performance over a wide temperature range

Compact surface mount package for space-constrained designs

High voltage and current handling capabilities

Low collector-emitter saturation voltage for efficient operation

High DC current gain for improved circuit performance