MMBTA63LT1G - onsemi

Manufacturer Part Number

MMBTA63LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

Package: SOT-23-3 (TO-236)

Base Product Number: MMBTA63

Package / Case: TO-236-3, SC-59, SOT-23-3

Supplier Device Package: SOT-23-3 (TO-236)

Packaging: Tape & Reel (TR)

Operating Temperature: -55°C ~ 150°C (TJ)

Power Rating: 225 mW

Collector-Emitter Breakdown Voltage: 30 V

Collector Current (Max): 500 mA

Collector Cutoff Current (Max): 100 nA (ICBO)

Collector-Emitter Saturation Voltage: 1.5 V @ 100 mA, 100 μA

Transistor Type: PNP Darlington

DC Current Gain (hFE): 5000 min @ 100 mA, 5 V

Transition Frequency: 125 MHz

Surface Mount Mounting

Product Advantages

High DC current gain

High switching speed

Compact surface mount package

RoHS3 compliant

Key Technical Parameters

Power Rating: 225 mW

Collector-Emitter Breakdown Voltage: 30 V

Collector Current (Max): 500 mA

DC Current Gain (hFE): 5000 min @ 100 mA, 5 V

Transition Frequency: 125 MHz

Quality and Safety Features

RoHS3 compliant

Compatibility

Compatible with various electronic circuits and applications requiring a PNP Darlington transistor

Application Areas

Amplifiers

Switches

Drivers

Logic circuits

Power supplies

Product Lifecycle

Current production, no discontinuation planned

Replacements and upgrades available if needed

Key Reasons to Choose

High DC current gain for efficient amplification

High switching speed for fast response

Compact surface mount package for space-saving design

RoHS3 compliance for environmentally friendly use

Broad compatibility and applicability in various electronic circuits