MMBTA56LT1G - onsemi

Manufacturer Part Number

MMBTA56LT1G

Manufacturer

onsemi

Introduction

This product is a single PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) surface mount package.

Product Features and Performance

Power rating of 225 mW

Collector-emitter breakdown voltage of 80 V

Collector current up to 500 mA

Collector cutoff current of 100 nA (max)

Saturation voltage of 250 mV @ 10 mA, 100 mA

DC current gain of 100 (min) @ 100 mA, 1 V

Transition frequency of 50 MHz

Product Advantages

Small surface mount package

Suitable for a wide range of applications

Robust performance characteristics

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 80 V

Current Collector (Ic) (Max): 500 mA

Current Collector Cutoff (Max): 100 nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 250 mV @ 10 mA, 100 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100 mA, 1 V

Frequency Transition: 50 MHz

Quality and Safety Features

RoHS3 compliant

Reliable operation within the specified temperature range of -55°C to 150°C

Compatibility

Can be used in a wide range of electronic circuits and applications

Application Areas

Suitable for general-purpose amplifier and switching applications

Can be used in consumer electronics, industrial equipment, and more

Product Lifecycle

This product is currently in production and is not nearing discontinuation

Replacement or upgrade options may be available from the manufacturer

Several Key Reasons to Choose This Product

Robust performance characteristics with high voltage and current ratings

Small surface mount package for efficient board space utilization

RoHS3 compliance for environmentally-friendly applications

Reliable operation over a wide temperature range

Suitable for a broad range of electronic circuit designs and applications