MMBTA56-7-F - Diodes Incorporated

Manufacturer Part Number

MMBTA56-7-F

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

Automotive-grade, AEC-Q101 qualified

Surface mount package (SOT-23-3)

Wide operating temperature range: -55°C to 150°C

High power rating: 300 mW

High breakdown voltage: 80 V (Collector-Emitter)

High collector current: 500 mA

Low collector cutoff current: 100 nA (max)

Low collector-emitter saturation voltage: 250 mV @ 10 mA, 100 mA

High DC current gain: 100 (min) @ 100 mA, 1 V

High transition frequency: 50 MHz

Product Advantages

Automotive and industrial-grade reliability

Compact surface mount package

Wide operating temperature range

High power handling capability

High voltage and current ratings

Low saturation voltage and high current gain

Key Technical Parameters

Package: SOT-23-3

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage: 80 V

Collector Current: 500 mA

Collector Cutoff Current: 100 nA (max)

Collector-Emitter Saturation Voltage: 250 mV @ 10 mA, 100 mA

DC Current Gain: 100 (min) @ 100 mA, 1 V

Transition Frequency: 50 MHz

Quality and Safety Features

ROHS3 compliant

Automotive-grade, AEC-Q101 qualified

Compatibility

Suitable for a wide range of electronic circuits and applications

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Amplifier and switching circuits

Product Lifecycle

This product is an active, in-production part

Replacement or upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

Automotive-grade reliability and performance

Wide operating temperature range

High power and voltage handling capabilities

Low saturation voltage and high current gain

Compact surface mount package

RoHS3 compliance for environmental safety