Manufacturer Part Number
IPP60R600P6
Manufacturer
Infineon Technologies
Introduction
High-performance MOSFET transistor for power conversion applications
Product Features and Performance
600V CoolMOS N-channel power MOSFET
Low on-resistance of 600mΩ @ 2.4A, 10V
High current capability of 7.3A continuous drain current
Low input capacitance of 557pF @ 100V
Low gate charge of 12nC @ 10V
Suitable for high-frequency switching applications
Robust avalanche capability
Product Advantages
Improved efficiency in power conversion
Reduced power losses
Compact design due to high power density
Reliable performance with wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 600mΩ @ 2.4A, 10V
Continuous Drain Current (Id): 7.3A @ 25°C
Input Capacitance (Ciss): 557pF @ 100V
Power Dissipation (Ptot): 63W @ Tc
Quality and Safety Features
Robust design for high reliability
Compliant with relevant safety standards
Compatibility
Suitable for use in various power conversion applications
Application Areas
Switch-mode power supplies
Inverters
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose This Product
High efficiency and low power losses
Compact design and high power density
Reliable performance across wide temperature range
Robust avalanche capability for improved system reliability
Compatibility with various power conversion applications
