Manufacturer Part Number
IPP60R600P7XKSA1
Manufacturer
Infineon Technologies
Introduction
The IPP60R600P7XKSA1 is a high-performance N-channel power MOSFET from Infineon Technologies' CoolMOS P7 series.
Product Features and Performance
Drain to Source Voltage (Vdss) of 650V
Maximum Gate-Source Voltage (Vgs) of ±20V
On-State Resistance (Rds(on)) of 600mΩ @ 1.7A, 10V
Continuous Drain Current (Id) of 6A at 25°C (Tc)
Input Capacitance (Ciss) of 363pF @ 400V
Power Dissipation (Max) of 30W (Tc)
Operating Temperature Range of -55°C to 150°C (TJ)
Product Advantages
Excellent power efficiency due to low on-state resistance
High voltage handling capability
Compact and robust TO-220-3 package
Suitable for high-frequency and high-power switching applications
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)) of 4V @ 80A
Gate Charge (Qg) of 9nC @ 10V
Drive Voltage Range of 10V (Max Rds(on), Min Rds(on))
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Compatible with various high-power switching applications, such as power supplies, motor drives, and inverters.
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
The IPP60R600P7XKSA1 is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from Infineon's CoolMOS P7 series.
Key Reasons to Choose This Product
Excellent power efficiency due to low on-state resistance
High voltage handling capability for demanding applications
Compact and robust packaging for reliable operation
Suitable for high-frequency and high-power switching applications
RoHS3 compliance for environmental responsibility