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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIPP60R750E6
Infineon Technologies
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IPP60R750E6 - Infineon Technologies

Manufacturer Part Number
IPP60R750E6
Manufacturer
Infineon Technologies
Allelco Part Number
32D-IPP60R750E6
ECAD Model
Parts Description
N-CHANNEL POWER MOSFET
Detailed Description
Package
TO-220-3
Data sheet
IPP60R750E6.pdf
RoHs Status
ROHS3 Compliant
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In stock: 54180

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Specifications

IPP60R750E6 Tech Specifications
Infineon Technologies - IPP60R750E6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IPP60R750E6

Product Attribute Attribute Value  
Manufacturer Infineon Technologies  
Vgs(th) (Max) @ Id 3.5V @ 170µA  
Vgs (Max) ±20V  
Technology MOSFET (Metal Oxide)  
Supplier Device Package PG-TO220-3-1  
Series CoolMOS E6™  
Rds On (Max) @ Id, Vgs 750mOhm @ 2A, 10V  
Power Dissipation (Max) 48W (Tc)  
Package / Case TO-220-3  
Package Bulk  
Product Attribute Attribute Value  
Operating Temperature -55°C ~ 150°C (TJ)  
Mounting Type Through Hole  
Input Capacitance (Ciss) (Max) @ Vds 373 pF @ 100 V  
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V  
FET Type N-Channel  
FET Feature -  
Drive Voltage (Max Rds On, Min Rds On) 10V  
Drain to Source Voltage (Vdss) 600 V  
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc)  

Parts Introduction

Manufacturer Part Number

IPP60R750E6

Manufacturer

Infineon Technologies

Introduction

This product is a discrete semiconductor device, specifically a single transistor - FET, MOSFET.

Product Features and Performance

N-Channel MOSFET

600V Drain to Source Voltage

750mOhm Max On-Resistance @ 2A, 10V

7A Continuous Drain Current @ 25°C (Tc)

373pF Max Input Capacitance @ 100V

48W Max Power Dissipation @ Tc

-55°C to 150°C Operating Temperature Range

Product Advantages

Efficient power conversion with low on-resistance

High voltage capability for various power applications

Compact through-hole package design

Key Technical Parameters

Vdss: 600V

Vgs(max): ±20V

Rds(on) max: 750mOhm @ 2A, 10V

Id continuous: 5.7A @ 25°C (Tc)

Ciss max: 373pF @ 100V

Power Dissipation max: 48W @ Tc

Quality and Safety Features

RoHS3 compliant

Reliable through-hole mounting

Compatibility

Compatible with various power electronics and power conversion applications.

Application Areas

Switched-mode power supplies

Motor drives

Inverters

Power factor correction circuits

Industrial and consumer electronics

Product Lifecycle

This product is an active and current offering from Infineon Technologies. Replacement or upgrade options may be available, but the specific lifecycle status should be verified with the manufacturer.

Key Reasons to Choose

Excellent power efficiency with low on-resistance

High voltage capability for diverse power applications

Compact and reliable through-hole package design

Proven performance and quality from Infineon Technologies

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IPP60R750E6

Product Attribute IPP60R750E6 IPP60R600P7 IPP60R600P6 IPP60R600CP
Part Number IPP60R750E6 IPP60R600P7 IPP60R600P6 IPP60R600CP
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Input Capacitance (Ciss) (Max) @ Vds 373 pF @ 100 V - 557 pF @ 100 V 550 pF @ 100 V
Drain to Source Voltage (Vdss) 600 V - 600 V 600 V
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Package Bulk Bulk Bulk Bulk
Vgs(th) (Max) @ Id 3.5V @ 170µA - 4.5V @ 200µA 3.5V @ 220µA
FET Feature - - - -
Vgs (Max) ±20V - ±20V ±20V
Rds On (Max) @ Id, Vgs 750mOhm @ 2A, 10V - 600mOhm @ 2.4A, 10V 600mOhm @ 3.3A, 10V
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Package / Case TO-220-3 - TO-220-3 TO-220-3
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc) - 7.3A (Tc) 6.1A (Tc)
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V - 12 nC @ 10 V 27 nC @ 10 V
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole - Through Hole Through Hole
FET Type N-Channel - N-Channel N-Channel
Supplier Device Package PG-TO220-3-1 - PG-TO220-3-1 PG-TO220-3-1
Series CoolMOS E6™ - CoolMOS™ CoolMOS™
Power Dissipation (Max) 48W (Tc) - 63W (Tc) 60W (Tc)

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Shipment

Delivery Time

In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

Delivery Cost

  1. Use your express account for shipment if you have one.
  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

  1. Global Common Shipment by DHL / UPS / FedEx / TNT / EMS / SF we support.
  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Your Faithful Supply Chain Partner -

Contact us if you have any questions.

  1. Phone
    +00852 9146 4856

Certifications & Memberships

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Infineon Technologies

IPP60R750E6

Infineon Technologies
32D-IPP60R750E6

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