Manufacturer Part Number
IPP60R600E6
Manufacturer
Infineon Technologies
Introduction
The IPP60R600E6 is a high-performance N-channel MOSFET transistor from Infineon Technologies' CoolMOS E6 series.
Product Features and Performance
600V drain-source voltage
Low on-resistance of 600mΩ @ 2.4A, 10V
High continuous drain current of 7.3A at 25°C case temperature
Low input capacitance of 440pF @ 100V
Maximum power dissipation of 63W at 25°C case temperature
Product Advantages
Excellent efficiency and thermal performance
Reduced switching losses
Increased power density
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 600mΩ @ 2.4A, 10V
Continuous Drain Current (Id): 7.3A @ 25°C
Input Capacitance (Ciss): 440pF @ 100V
Power Dissipation (Ptot): 63W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-frequency, high-efficiency power conversion applications
Compatibility
Compatible with a wide range of power electronic systems and circuits
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Welding equipment
Induction heating
Solar inverters
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose
Excellent efficiency and thermal performance
Low switching losses for increased power density
Robust and reliable design for high-stress applications
Wide compatibility with various power electronic systems
