Manufacturer Part Number
IPP60R450E6
Manufacturer
Infineon Technologies
Introduction
The Infineon IPP60R450E6 is a high-performance N-channel MOSFET transistor designed for power switching applications.
Product Features and Performance
600V drain-to-source voltage (Vdss)
450mOhm maximum on-state resistance (Rds(on))
2A continuous drain current (Id) at 25°C
620pF maximum input capacitance (Ciss)
74W maximum power dissipation
Operating temperature range of -55°C to 150°C
Product Advantages
Low on-state resistance for high efficiency
High breakdown voltage for versatile applications
High current handling capability
Suitable for high-frequency switching
Compact TO-220 package for easy integration
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 450mOhm
Continuous Drain Current (Id): 9.2A
Input Capacitance (Ciss): 620pF
Power Dissipation (Tc): 74W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting for reliable connections
Robust TO-220 package for industrial applications
Compatibility
The IPP60R450E6 is compatible with various power electronics and industrial control systems that require high-performance N-channel MOSFETs.
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control
Product Lifecycle
The IPP60R450E6 is an active product in Infineon's portfolio, with no indication of discontinuation. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
Excellent efficiency and power handling capabilities
Suitable for high-voltage, high-current applications
Robust and reliable design for industrial use
Compatibility with a wide range of power electronics systems
Availability and support from a trusted semiconductor manufacturer, Infineon Technologies